* Advanced TrenchMOS provides low RDSon and low gate charge
* High efficiency gains in switching power converters
* Improved mechanical and thermal characteristics
* LFPAK provides maximum power density in a Power SO8 package 1.3 Applications
* DC-to-DC conve
PSMN017-60YS Datasheet (280.40 KB)
PSMN017-60YS
NXP ↗ Semiconductors
280.40 KB
N-channel mosfet.
PSMN017-60YS N-channel LFPAK 60 V 17 mΩ standard level MOSFET Rev. 01 22 January 2010 Objective data sheet 1. Product profile 1.1 General d.
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