* High reliability Power SO8 package, qualified to 175°C
* Low parasitic inductance and resistance
* Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
* Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads 1.3 Applic
PSMN2R6-30YLC Datasheet (412.85 KB)
PSMN2R6-30YLC
NXP ↗ Semiconductors
412.85 KB
N-channel mosfet.
www.DataSheet.co.kr LF PA K PSMN2R6-30YLC N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 2 May 2011 P.
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