* High reliability Power SO8 package, qualified to 175°C Low parasitic inductance and resistance Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads 3. Applicati
PSMN4R1-30YLC Datasheet (313.53 KB)
PSMN4R1-30YLC
NXP ↗ Semiconductors
313.53 KB
Mosfet.
PSMN4R1-30YLC
12 February 2013
LF
PA K
N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology
Product data sheet
1. General.
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