* High reliability Power SO8 package, qualified to 175°C
* Low parasitic inductance and resistance
* Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
* Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads 1.3 Applications
* DC-
PSMN7R0-30YLC Datasheet (234.07 KB)
PSMN7R0-30YLC
NXP ↗ Semiconductors
234.07 KB
Mosfet.
LF PA K
PSMN7R0-30YLC
N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology
Rev. 2
* 1 September 2011 Product data she.
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