PSMN7R0-30YLC Datasheet - NXP Semiconductors

PSMN7R0-30YLC MOSFET

PSMN7R0-30YLC Features

* High reliability Power SO8 package, qualified to 175°C

* Low parasitic inductance and resistance

* Optimised for 4.5V Gate drive utilising NextPower Superjunction technology

* Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads 1.3 Applications

* DC-

Datasheet Details

PSMN7R0-30YLC

NXP ↗ Semiconductors

234.07 KB

Mosfet.

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PSMN7R0-30YLC MOSFET NXP Semiconductors

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