74HC2G02
FEATURES
- Wide supply voltage range from 2.0 to 6.0 V
- Symmetrical output impedance
- High noise immunity
- Low power dissipation
- Balanced propagation delays
- Very small 8 pins package
- Output capability is standard
- ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V.
- Specified from
- 40 to +85 °C and
- 40 to +125 °C. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns. DESCRIPTION
74HC2G02; 74HCT2G02
The 74HC2G/HCT2G02 is a high-speed Si-gate CMOS device. The 74HC2G/HCT2G02 provides the 2-input NOR function.
TYPICAL SYMBOL t PHL/t PLH CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + ∑ (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in p F; VCC = supply voltage in Volts; N = total load switching outputs; ∑ (CL × VCC2 × fo) = sum of outputs. 2. For 74HC2G02 the condition is VI = GND to VCC. For 74HCT2G02 the...
