A2T21H100-25SR3 RF Power LDMOS Transistor

NXP

Description

NXP Semiconductors Technical Data Document Number: A2T21H100- 25S Rev.1, 01/2022 RF Power LDMOS Transistor N- Channel Enhancement- Mode Lateral MOS.

📥 Download Datasheet

A2T21H100-25SR3 Datasheet Preview — Preview of A2T21H100-25SR3 PDF

Datasheet Specifications

Part number: A2T21H100-25SR3
Manufacturer: NXP ↗
File Size: 432.89 KB
Datasheet: A2T21H100-25SR3-NXP.pdf
Description: RF Power LDMOS Transistor

Features

* Advanced High Performance In- Package Doherty
* Greater Negative Gate- Source Voltage Range for Improved Class C Operation
* Designed for Digital Predistortion Error Correction Systems A2T21H100- 25SR3 2110
* 2170 MHz, 18 W AVG. , 28 V AIRFAST RF POWER LDMOS TRANSISTOR NI- 780S-

Applications

* covering the frequency range of 2110 to 2170 MHz. 2100 MHz
* Typical Doherty Single- Carrier W- CDMA Performance: VDD = 28 Vdc, IDQA = 250 mA, VGSB = 0.2 Vdc, Pout = 18 W Avg. , Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D Output PAR ACPR (%) (dB) (dBc) 21

A2T21H100-25SR3 Distributors

📁 Related Datasheet

A2TPMI

📌 All Tags

A2T21H100-25SR3 Power LDMOS Transistor NXP

NXP A2T21H100-25SR3-like datasheet