A2T21H100-25SR3 Datasheet - NXP

A2T21H100-25SR3 RF Power LDMOS Transistor

NXP Semiconductors Technical Data Document Number: A2T21H100- 25S Rev. 1, 01/2022 RF Power LDMOS Transistor N- Channel Enhancement- Mode Lateral MOSFET This 18 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz. 2100 MHz Typical Doherty Single- Carrier W- CDMA Performance: VDD = 28 Vdc, IDQA = 250 mA, VGSB = 0.2 Vdc, Pout = 18 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. .

A2T21H100-25SR3 Features

* Advanced High Performance In- Package Doherty

* Greater Negative Gate- Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction Systems A2T21H100- 25SR3 2110

* 2170 MHz, 18 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR NI- 780S-

A2T21H100-25SR3 Datasheet (432.89 KB)