* Advanced High Performance In- Package Doherty
* Greater Negative Gate- Source Voltage Range for Improved Class C Operation
* Designed for Digital Predistortion Error Correction Systems A2T21H100- 25SR3 2110
* 2170 MHz, 18 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR NI- 780S-
A2T21H100-25SR3 Datasheet (432.89 KB)
A2T21H100-25SR3
432.89 KB
Rf power ldmos transistor.
NXP Semiconductors Technical Data Document Number: A2T21H100- 25S Rev. 1, 01/2022 RF Power LDMOS Transistor N- Channel Enhancement- Mode Lateral MOS.
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