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BAS416 Low-leakage diode

BAS416 Description

DISCRETE SEMICONDUCTORS DATA SHEET BAS416 Low-leakage diode Product data sheet Supersedes data of 2002 Nov 19 2004 Jan 26 NXP Semiconductors Low-le.
Epitaxial, medium-speed switching diode with a low leakage current encapsulated in a small SOD323 SMD plastic package.

BAS416 Features

* Plastic SMD package
* Low leakage current: typ. 3 pA
* Switching time: typ. 0.8 µs
* Continuous reverse voltage: max. 75 V
* Repetitive peak reverse voltage: max. 85 V

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Datasheet Details

Part number
BAS416
Manufacturer
NXP ↗
File Size
68.61 KB
Datasheet
BAS416-NXP.pdf
Description
Low-leakage diode

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Low-leakage diode NXP
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