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BF556C N-channel silicon junction field-effect transistors

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Description

DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification Supersedes data o.
N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.

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Features

* Low leakage level (typ. 500 fA)
* High gain

Applications

* Impedance converters in e. g. electret microphones and infra-red detectors

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