BFM520 Datasheet - NXP

BFM520 Dual NPN wideband transistor

5 4 c1 b2 e1 e2 MAM210 c2 DESCRIPTION Dual transistor with two silicon NPN RF dies in a surface mount 6-pin SOT363 (S-mini) package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar d.

BFM520 Features

* Small size

* Temperature and hFE matched

* Low noise and high gain

* High gain at low current and low capacitance at low voltage

* Gold metallization ensures excellent reliability. APPLICATIONS

* Oscillator and buffer amplifiers

* Balanced am

BFM520 Datasheet (96.58 KB)