BGD702N - 750 MHz/ 18.5 dB gain power doubler amplifier

Datasheet Summary

Description

Hybrid amplifier module in a SOT115J package operating at a voltage supply of 24 V (DC).

Fig.1 Simplified outline.

Features

Excellent linearity.
Extremely low noise.
Silicon nitride passivation.
Rugged construction.
Gold metallization ensures excellent reliability.

NXP

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BGD702N 750 MHz/ 18.5 dB gain power doubler amplifier by NXP - Datasheet Preview — Datasheet preview – BGD702N

Datasheet Details

Part number	BGD702N
Manufacturer	NXP
File Size	53.94 KB
Description	750 MHz/ 18.5 dB gain power doubler amplifier
Datasheet	BGD702N Datasheet
Additional preview pages of the BGD702N datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD702N 750 MHz, 18.5 dB gain power doubler amplifier Product speciﬁcation Supersedes data of 2001 Oct 25 2001 Nov 02 Philips Semiconductors Product speciﬁcation 750 MHz, 18.5 dB gain power doubler ampliﬁer FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability. APPLICATIONS • CATV systems operating in the 40 to 750 MHz frequency range. DESCRIPTION Hybrid amplifier module in a SOT115J package operating at a voltage supply of 24 V (DC). PINNING - SOT115J PIN 1 2 3 5 7 8 9 input common common +VB common common output BGD702N DESCRIPTION handbook, halfpage 1 2 3 8 5 7 9 Side view MSA319 Fig.1 Simplified outline.

Published: Mar 23, 2005 |