Description
BLF2425M7L100; BLF2425M7LS100 Power LDMOS transistor Rev.1 * 6 December 2013 Product data sheet 1.Product profile 1.1 General .
100 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz.
Features
* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Designed for low memory effects providing excellent digital pre-distortion capability
* Internally matched for ease of use
* Integrated ESD protection
* Compliant to Directive 2002/
Applications
* at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal
f
IDq VDS PL(AV) Gp D ACPR885k ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
(dBc)
IS-95
2300 to 2400 900 28 20
18 27
