BLF2425M7LS140, BLF2425M7L140 Datasheet - NXP

BLF2425M7LS140, BLF2425M7L140, Power LDMOS transistor

BLF2425M7L140; BLF2425M7LS140 Power LDMOS transistor Rev.3 * 6 September 2012 Product data sheet 1.Product profile 1.1 General .
140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.

Features

* http://www. DataSheet4U. net/
* High efficiency High power gain Excellent ruggedness Excellent thermal stability Integrated ESD protection Designed for broadband operation (2400 MHz to 2500 MHz) Internally matched Compliant to Directive 2002/95/EC, regar

Applications

* at frequencies from 2400 MHz to 2500 MHz. The BLF2425M7L140 and BLF2425M7LS140 are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions Table 1. Typical performance Typical RF performance at Tcase = 25 C; IDq = 1300

BLF2425M7L140_NXP.pdf