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BLF2425M7LS250P, BLF2425M7L250P Power LDMOS transistor

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Description

BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev.4 * 12 July 2013 Product data sheet 1.Product profile 1.1 General .
250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.

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This datasheet PDF includes multiple part numbers: BLF2425M7LS250P, BLF2425M7L250P. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
BLF2425M7LS250P, BLF2425M7L250P
Manufacturer
NXP ↗
File Size
170.66 KB
Datasheet
BLF2425M7L250P-NXP.pdf
Description
Power LDMOS transistor
Note
This datasheet PDF includes multiple part numbers: BLF2425M7LS250P, BLF2425M7L250P.
Please refer to the document for exact specifications by model.

Features

* High efficiency
* Easy power control
* Excellent ruggedness
* Excellent thermal stability
* Integrated ESD protection
* Designed for broadband operation (2400 MHz to 2500 MHz)
* Internally matched
* Compliant to Directive 2002/95/EC, regarding Restriction of Hazardo

Applications

* at frequencies from 2400 MHz to 2500 MHz. The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions Table 1. Typical performance RF performance at Tcase = 25 C in a common sour

BLF2425M7LS250P Distributors

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