BLF246 Datasheet - NXP

BLF246 VHF power MOS transistor

drain source gate source 1 4 DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched .

BLF246 Features

* High power gain

* Low noise figure

* Easy power control

* Good thermal stability

* Withstands full load mismatch. APPLICATIONS

* Large signal amplifier applications in the VHF frequency range. handbook, halfpage BLF246 PINNING - SOT121 PIN 1 2 3 4 S

BLF246 Datasheet (86.03 KB)