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BLF246 VHF power MOS transistor

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Description

DISCRETE SEMICONDUCTORS DATA SHEET BLF246 VHF power MOS transistor Product specification Supersedes data of September 1992 1996 Oct 21 Philips Semic.
drain source gate source 1 4 DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121 flange packa.

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Features

* High power gain
* Low noise figure
* Easy power control
* Good thermal stability

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