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BLU6H0410L-600P Power LDMOS transistor

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Description

BLU6H0410L-600P; BLU6H0410LS-600P Power LDMOS transistor Rev.2 * 12 July 2013 Product data sheet 1.Product profile 1.1 General descriptio.
A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz.

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Datasheet Specifications

Part number
BLU6H0410L-600P
Manufacturer
NXP ↗
File Size
214.66 KB
Datasheet
BLU6H0410L-600P-NXP.pdf
Description
Power LDMOS transistor

Features

* Excellent ruggedness (VSWR  40 : 1 through all phases)
* Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
* High power gain
* High efficiency
* Internal input matching for high gain and optimum broadband operation
* Excellent reliability
* Easy power contr

Applications

* and industrial applications in the frequency range of 400 MHz to 900 MHz. Table 1. Application information Typical RF performance at VDS = 50 V; in a common source 860 MHz narrowband test circuit; unless otherwise specified. Test signal f IDq PL(AV) PL(M) Gp D IMD3 (MHz) (mA) (W) (W) (dB)

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