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BLU6H0410LS-600P - Power LDMOS transistor

This page provides the datasheet information for the BLU6H0410LS-600P, a member of the BLU6H0410L-600P Power LDMOS transistor family.

Datasheet Summary

Description

A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz.

Table 1.

Typical RF performance at VDS = 50 V; in a common source 860 MHz narrowband test circuit; unless otherwise specified.

Features

  • Excellent ruggedness (VSWR  40 : 1 through all phases).
  • Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W.
  • High power gain.
  • High efficiency.
  • Internal input matching for high gain and optimum broadband operation.
  • Excellent reliability.
  • Easy power control.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet preview – BLU6H0410LS-600P

Datasheet Details

Part number BLU6H0410LS-600P
Manufacturer NXP
File Size 214.66 KB
Description Power LDMOS transistor
Datasheet download datasheet BLU6H0410LS-600P Datasheet
Additional preview pages of the BLU6H0410LS-600P datasheet.

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Full PDF Text Transcription

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BLU6H0410L-600P; BLU6H0410LS-600P Power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz. Table 1. Application information Typical RF performance at VDS = 50 V; in a common source 860 MHz narrowband test circuit; unless otherwise specified. Test signal f IDq PL(AV) PL(M) Gp D IMD3 (MHz) (mA) (W) (W) (dB) (%) (dBc) pulsed, class-AB [1] 860 1.3 - 600 20 58 - [1] Measured at  = 10 %; tp = 1 ms. 1.2 Features and benefits  Excellent ruggedness (VSWR  40 : 1 through all phases)  Optimum thermal behavior and reliability, Rth(j-c) = 0.
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