BS170 N-channel MOSFET

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET BS170 N-channel vertical D-MOS transistor Product speciﬁcation File under Discrete Semiconductors, SC13b April 19.
N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers.

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Datasheet Specifications

Part number: BS170
Manufacturer: NXP ↗
File Size: 49.72 KB
Datasheet: BS170_PhilipsSemiconductors.pdf
Description: N-channel MOSFET

Features

* Very low RDS(on).
* Direct interface to C-MOS, TTL, etc.
* High-speed switching.
* No secondary breakdown. PINNING - TO-92 VARIANT 1 = source 2 = gate 3 = drain PIN CONFIGURATION QUICK REFERENCE DATA Drain-source voltage Gate-source voltage Drain current (DC) Total

Applications

* BS170 This data sheet contains target or goal speciﬁcations for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains ﬁnal product speciﬁcations. These products are not designed for use in life support appliances, devic

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