BSP250 - P-channel enhancement mode vertical D-MOS transistor

NXP

BSP250 Datasheet Preview — Preview of BSP250 PDF

Datasheet Details

Part number	BSP250
Manufacturer	NXP ↗
File Size	114.24 KB
Description	P-channel enhancement mode vertical D-MOS transistor
Datasheet	BSP250_PhilipsSemiconductors.pdf

BSP250 Product details

Description

handbook, halfpage BSP250 PINNING - SOT223 PIN 1 2 3 4 SYMBOL g d s d DESCRIPTION gate drain source drain 4 d P-channel enhancement mode vertical D-MOS transistor in a SOT223 plastic SMD package.g CAUTION The device is supplied in an antistatic package.The gate-source input must be protected against static discharge during transport or handling.1 Top view 2 3 MAM121 s Fig.1 Simplified outline and symbol.QUICK REFERENCE DATA SYMBOL VDS VSD VGSO VGSth ID RDSon Ptot PARAMETER drain-sour

Features

High-speed switching.
No secondary breakdown.
Very low on-resistance.

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Published: Mar 23, 2005 |