BSX20 Datasheet | NXP Semiconductors

FEATURES - Low current (max. 200 m A) - Low voltage (max. 15 V). APPLICATIONS - High-speed saturated switching (and HF amplifier applications). DESCRIPTION NPN switching transistor in a TO-18 metal package. MAM264 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION handbook, halfpage 1 3 2 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot h FE f T toff PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tamb ≤ 25 °C IC = 10 m A; VCE = 1 V IC = 100 m A; VCE = 2 V IC = 10 m A; VCE = 10 V; f = 100 MHz ICon = 10 m A; IBon = 3 m A; IBoff = - 1.5 m A open emitter open base CONDITIONS - - - - 40 20 500 - MIN. MAX. 40 15 200 360 120 - - 30 MHz ns V V m A m W UNIT 1997 May 14 Philips Semiconductors Product specification NPN switching transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature t ≤ 10 µs CONDITIONS open emitter open base open collector - - - - - - - - 65 - - 65 MIN. MAX. 40 15 4.5 200 300 100 360 +150 200 +150 UNIT V V V m A m A m A m W °C °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case CONDITIONS in free air VALUE 480 150 UNIT K/W K/W CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 20 V IE = 0; VCB = 20 V; Tj = 150 °C IC = 0; VEB = 4 V IC = 10 m A; VCE = 1 V IC = 10 m A; VCE = 1 V; Tj = - 55 °C IC = 100 m A; VCE = 2 V VCEsat collector-emitter...