Datasheet Details
- Part number
- BU2708DX
- Manufacturer
- NXP ↗
- File Size
- 74.17 KB
- Datasheet
- BU2708DX_PhilipsSemiconductors.pdf
- Description
- Silicon Diffused Power Transistor
BU2708DX Description
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708DX GENERAL .
High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope.
BU2708DX Features
* exceptional tolerance to base drive and collector current load variations resulting in a low worst case dissipation. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF ts PARAMETER Collector-emitter voltage peak value Collector-emitter
BU2708DX Applications
* These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to full
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