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BU2722AF

Silicon Diffused Power Transistor

BU2722AF General Description

New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700 V. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAME.

BU2722AF Datasheet (71.70 KB)

Preview of BU2722AF PDF

Datasheet Details

Part number:

BU2722AF

Manufacturer:

NXP ↗

File Size:

71.70 KB

Description:

Silicon diffused power transistor.

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BU2722AF Silicon Diffused Power Transistor NXP

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