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BUJ205A Silicon Diffused Power Transistor

BUJ205A Description

Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ205A GENERAL .
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting b.

BUJ205A Applications

* converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector cur

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