BUJ303B Silicon Diffused Power Transistor

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET BUJ303B Silicon Diffused Power Transistor Product specification March 2002 NXP Semiconductors Silicon Diffused .
High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for use in high frequency electronic lighting.

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Datasheet Specifications

Part number: BUJ303B
Manufacturer: NXP ↗
File Size: 143.70 KB
Datasheet: BUJ303B-NXP.pdf
Description: Silicon Diffused Power Transistor

Applications

* converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Coll

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BUJ303B Silicon Diffused Power Transistor NXP

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