BUK7621-30 TrenchMOS transistor Standard level FET

NXP

Description

Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL .
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology.

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Datasheet Specifications

Part number: BUK7621-30
Manufacturer: NXP ↗
File Size: 55.52 KB
Datasheet: BUK7621-30_PhilipsSemiconductors.pdf
Description: TrenchMOS transistor Standard level FET

Applications

* BUK7621-30 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 30 50 94 175 21 UNIT V A W ˚C mΩ PINNING - SOT404 (D2PAK) PIN 1 2 3 mb gate drain source d

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BUK7621-30 TrenchMOS transistor Standard level FET NXP

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