BYQ30E-200 Dual ultrafast power diode

NXP

Description

BYQ30E-200 Dual ultrafast power diode Rev.4 * 1 September 2010 Product data sheet 1.Product profile 1.1 General .
Dual ultrafast power diode in a SOT78 (TO-220AB) plastic package 1. Fast switching. High thermal cycling pe.

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Datasheet Specifications

Part number: BYQ30E-200
Manufacturer: NXP ↗
File Size: 114.78 KB
Datasheet: BYQ30E-200_PhilipsSemiconductors.pdf
Description: Dual ultrafast power diode

Features

* Fast switching
* High thermal cycling performance
* Low forward volt drop
* Low thermal resistance
* Reverse surge capability

Applications

* Output rectifiers in high-frequency switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM IO(AV) repetitive peak reverse voltage average output current squire-wave pulse; δ = 0.5 ; Tmb ≤ 104 °C; both diodes conducting; s

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BYQ30E-200 Dual ultrafast power diode NXP

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