BYR16W-1200

Dual ultrafast power diode

NXP

* Fast switching

* Low forward voltage drop

* Low thermal resistance

* Soft recovery characteristic

* Reduces switching losses in associated MOSFET or IGBT

* Planar passivated for voltage ruggedness and reliability 3. Applications

* Switched-M

BYR16W-1200

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Dual ultrafast power diode.

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BYR16W-1200 Dual ultrafast power diode NXP

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