CLF1G0035-100 Broadband RF power GaN HEMT

NXP

Description

CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev.2 * 29 January 2013 Objective data sheet 1.Product profile 1.1 General descri.
CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP.

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Datasheet Specifications

Part number: CLF1G0035-100
Manufacturer: NXP ↗
File Size: 184.41 KB
Datasheet: CLF1G0035-100-NXP.pdf
Description: Broadband RF power GaN HEMT

Features

* Frequency of operation is from DC to 3.5 GHz
* 100 W general purpose broadband RF Power GaN HEMT NXP Semiconductors CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT
* Excellent ruggedness (VSWR 10 : 1)
* High voltage operation (50 V)
* Thermally enhanced package 1.

Applications

* Commercial wireless infrastructure (cellular, WiMAX)
* Radar
* Broadband general purpose amplifier
* Public mobile radios
* Industrial, scientific, medical
* Jammers
* EMC testing

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📁 Related Datasheet

CLF1G0035-100P CLF1G0035-200P CLF1G0035-50 CLF1G0035S-100 CLF1G0035S-100P CLF1G0035S-200P

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CLF1G0035-100 Broadband power GaN HEMT NXP

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