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HEF4720B - 256-bit/ 1-bit per word random access memories

Datasheet Summary

Description

The HEF4720B and HEF4720V are 256-bit, 1-bit per word random access memories with 3-state outputs.

The memories are fully decoded and completely static.

Recommended supply voltage range for HEF4720B is 3 to 15 V and for HEF4720V is 4,5 to 12,5 V; minimum stand-by voltage for both types is 3 V.

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Datasheet Details

Part number HEF4720B
Manufacturer NXP
File Size 180.05 KB
Description 256-bit/ 1-bit per word random access memories
Datasheet download datasheet HEF4720B Datasheet
Additional preview pages of the HEF4720B datasheet.

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Full PDF Text Transcription

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INTEGRATED CIRCUITS DATA SHEET For a complete data sheet, please also download: • The IC04 LOCMOS HE4000B Logic Family Specifications HEF, HEC • The IC04 LOCMOS HE4000B Logic Package Outlines/Information HEF, HEC HEF4720B HEF4720V LSI 256-bit, 1-bit per word random access memories Product specification File under Integrated Circuits, IC04 January 1995 Philips Semiconductors Product specification 256-bit, 1-bit per word random access memories DESCRIPTION The HEF4720B and HEF4720V are 256-bit, 1-bit per word random access memories with 3-state outputs. The memories are fully decoded and completely static. Recommended supply voltage range for HEF4720B is 3 to 15 V and for HEF4720V is 4,5 to 12,5 V; minimum stand-by voltage for both types is 3 V.
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