IRFZ44NS N-Channel MOSFET

NXP

Description

Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL .
N-channel enhancement mode standard level field-effect power transistor in a surface mounting plastic envelope using ’trench’ technology.

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Datasheet Specifications

Part number: IRFZ44NS
Manufacturer: NXP ↗
File Size: 70.53 KB
Datasheet: IRFZ44NS_PhilipsSemiconductors.pdf
Description: N-Channel MOSFET

Applications

* IRFZ44NS QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 49 110 175 22 UNIT V A W ˚C mΩ PINNING - SOT404 (D2PAK) PIN 1 2 3 mb gate drain source dr

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IRFZ44NS N-Channel MOSFET NXP

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