LLE18010X Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18010X NPN microwave power transistor Product specification Supersedes data of December 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor Features - Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR - Interdigitated structure provides high emitter efficiency - Gold metallization realizes very good stability of the characteristics and excellent lifetime - Multicell geometry gives good balance of dissipated power and low thermal resistance - Internal input prematching ensures good stability and allows an easier design of wideband circuits. APPLICATION Intended for use in mon emitter, class AB amplifiers in CW conditions for professional applications up to 2 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange. 2 Top view handbook, 4 columns QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon emitter class AB amplifier. MODE OF OPERATION Class AB (CW) f (GHz) 1.85 VCE (V) 24 ICQ (mA) 10 PL1 (W) ≥1 Gpo (dB) ≥8.5 Zi; ZL (Ω) see Figs 6 and 7 PINNING - SOT437A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION 1 c b 3 e MAM112 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It...