LVE21050R NPN microwave power transistor

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET LVE21050R NPN microwave power transistor Product speciﬁcation Supersedes data of June 1992 1997 Feb 14 Philips S.
APPLICATIONS. Common emitter class-A linear power amplifiers up to 4.

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Datasheet Specifications

Part number: LVE21050R
Manufacturer: NXP ↗
File Size: 63.79 KB
Datasheet: LVE21050R_PhilipsSemiconductors.pdf
Description: NPN microwave power transistor

Features

* Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR
* Self-aligned process entirely ion implanted
* Gold metallization ensures an optimum temperature profile with excellent performance and reliability
* Input matching

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LVE21050R NPN microwave power transistor NXP

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