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LVE21050R - NPN microwave power transistor

NXP

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Datasheet Details

Part number	LVE21050R
Manufacturer	NXP ↗
File Size	63.79 KB
Description	NPN microwave power transistor
Datasheet	LVE21050R_PhilipsSemiconductors.pdf

LVE21050R Product details

Description

APPLICATIONS Common emitter class-A linear power amplifiers up to 4.2 GHz.

Features

Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR.
Self-aligned process entirely ion implanted.
Gold metallization ensures an optimum temperature profile with excellent performance and reliability.
Input matching cell improves input impedance and allows an easier design of wideband circuits. handbook, halfpage LVE21050R.

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Published: Mar 30, 2005 |