LVE21050R Datasheet - NXP

LVE21050R NPN microwave power transistor

APPLICATIONS * Common emitter class-A linear power amplifiers up to 4.2 GHz. 3 1 c b 3 DESCRIPTION Top view 2 MAM251 e NPN silicon planar epitaxial microwave power transistor in a SOT445A metal ceramic flange package with the emitter connected to the flange. Fig.1 Simplified outline a.

LVE21050R Features

* Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR

* Self-aligned process entirely ion implanted

* Gold metallization ensures an optimum temperature profile with excellent performance and reliability

* Input matching

LVE21050R Datasheet (63.79 KB)