LVE21050R Datasheet - NXP

NPN microwave power transistor

LVE21050R Features

* Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR

* Self-aligned process entirely ion implanted

* Gold metallization ensures an optimum temperature profile with excellent performance and reliability

* Input matching

LVE21050R General Description

APPLICATIONS * Common emitter class-A linear power amplifiers up to 4.2 GHz. 3 1 c b 3 DESCRIPTION Top view 2 MAM251 e NPN silicon planar epitaxial microwave power transistor in a SOT445A metal ceramic flange package with the emitter connected to the flange. Fig.1 Simplified outline a.

LVE21050R Datasheet (63.79 KB)

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Datasheet Details

Part number:

LVE21050R

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NXP ↗

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63.79 KB

Description:

Npn microwave power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET LVE21050R NPN microwave power transistor Product speciﬁcation Supersedes data of June 1992 1997 Feb 14 Philips S.

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LVE21050R NPN microwave power transistor NXP

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LVE21050R Features

LVE21050R General Description

Datasheet Details

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