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LX1214E500X NPN microwave power transistor

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Description

DISCRETE SEMICONDUCTORS DATA SHEET LX1214E500X NPN microwave power transistor Preliminary specification Supersedes data of December 1994 File under D.
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with emitter connected to flange.

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Features

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Interdigitated structure provides high emitter efficiency
* Gold metallization realizes very good stability of the characteristics and excellent lifetime
* Multi

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