Datasheet Details
Part number:
LXE16350X
Manufacturer:
File Size:
88.62 KB
Description:
NPN microwave power transistor
Features
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Interdigitated structure provides high emitter efficiency
* Gold metallization realizes very good stability of the characteristics and excellent lifetime
* Multi
LXE16350X_PhilipsSemiconductors.pdf
LXE16350X, NPN microwave power transistor
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic package, with emitter connected to flange.
LXE16350X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier.
MODE OF OPERATION Class AB (CW) f (GHz) 1.65 VCE (V) 24 ICQ (A
LXE16350X Distributor
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