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LZ1418E100R - Color CCD Area Sensor

Description

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the emitter connected to the flange.

Fig.1 Simplified outline and symbol.

Features

  • Interdigitated structure provides high emitter efficiency.
  • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR.
  • Gold metallization realizes very stable characteristics and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance.
  • Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.

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Datasheet preview – LZ1418E100R

Datasheet Details

Part number LZ1418E100R
Manufacturer NXP
File Size 66.78 KB
Description Color CCD Area Sensor
Datasheet download datasheet LZ1418E100R Datasheet
Additional preview pages of the LZ1418E100R datasheet.

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    Full PDF Text Transcription

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    DISCRETE SEMICONDUCTORS DATA SHEET LZ1418E100R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input and output prematching ensures good stability and allows an easier design of wideband circuits. APPLICATIONS • Common emitter class A amplifiers in CW conditions for military and professional applications between 1.4 to 1.
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