* Interdigitated structure provides high emitter efficiency
* Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
* Gold metallization realizes very stable characteristics and excellent lifetime
* Multicell geometry giv
LZ1418E100R Datasheet (66.78 KB)
LZ1418E100R
66.78 KB
Color ccd area sensor.
DISCRETE SEMICONDUCTORS
DATA SHEET
LZ1418E100R NPN microwave power transistor
Product specification Supersedes data of June 1992 1997 Feb 18
Philips.
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