LZ1418E100R Overview
1 c b e 2 MAM314 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the emitter connected to the flange. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon emitter class A wideband amplifier.
LZ1418E100R Key Features
- Interdigitated structure provides high emitter efficiency
- Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
- Gold metallization realizes very stable characteristics and excellent lifetime
- Multicell geometry gives good balance of dissipated power and low thermal resistance
- Internal input and output prematching ensures good stability and allows an easier design of wideband circuits
LZ1418E100R Applications
- mon emitter class A amplifiers in CW conditions for military and professional applications between 1.4 to 1.8 GHz
- SOT443A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION
- toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or di