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LZ1418E100R Color CCD Area Sensor

LZ1418E100R Description

DISCRETE SEMICONDUCTORS DATA SHEET LZ1418E100R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 Philips.
1 c b e 2 MAM314 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the emitter con.

LZ1418E100R Features

* Interdigitated structure provides high emitter efficiency
* Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
* Gold metallization realizes very stable characteristics and excellent lifetime
* Multicell geometry giv

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