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LZ1418E100R Datasheet Color CCD Area Sensor

Manufacturer: NXP Semiconductors

General Description

1 c b e 2 MAM314 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the emitter connected to the flange.

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class A wideband amplifier.

Overview

DISCRETE SEMICONDUCTORS DATA SHEET LZ1418E100R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power.

Key Features

  • Interdigitated structure provides high emitter efficiency.
  • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR.
  • Gold metallization realizes very stable characteristics and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance.
  • Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.