PBSS5612PA
PBSS5612PA is PNP transistor manufactured by NXP Semiconductors.
description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.
NPN plement: PBSS4612PA.
1.2 Features and benefits
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
- Exposed heat sink for excellent thermal and electrical conductivity
- Leadless small SMD plastic package with medium power capability
1.3 Applications
- Loadswitch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM
Quick reference data Parameter collector-emitter voltage collector current peak collector current
RCEsat collector-emitter saturation resistance
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Conditions open base single pulse; tp ≤ 1 ms IC =
- 6 A; IB =
- 300 m A
Min Typ Max Unit
- -
- 12 V
- -
- 6 A
- -
- 7 A
[1]
- 33 50 mΩ
NXP Semiconductors
12 V, 6 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pin 1 2 3
Pinning Description base emitter collector
Simplified outline Graphic symbol
12 Transparent top...
