PESD5V0F1BRLD
PESD5V0F1BRLD is Femtofarad bidirectional ESD protection diode manufactured by NXP Semiconductors.
description
Femtofarad bidirectional Electro Static Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is encapsulated in a leadless ultra small DFN1006D-2 (SOD882D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
The bination of extremely low capacitance, high ESD maximum rating and ultra small package makes the device ideal for high-speed data line protection and antenna protection applications.
1.2 Features and benefits
- Bidirectional ESD protection of one line
- ESD protection up to 10 k V (contact) and 15 k V (air)
- Femtofarad capacitance: Cd = 400 f F
- Low ESD clamping voltage: 30 V
- IEC 61000-4-2; level 4 (ESD)
- Package height typ. 0.37 mm at 30 ns and 8 k V
- Very low leakage current: IRM < 1 n A
- AEC-Q101 qualified
1.3 Applications
- 10/100/1000 Mbit/s Ethernet
- Fire Wire
- High-speed data lines
- SIM card protection
- Cellular handsets and accessories
- Portable electronics
- munication systems
- puters and peripherals
- Audio and video equipment
- Antenna protection
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Per device
VRWM Cd reverse standoff voltage diode capacitance
Conditions f = 1 MHz; VR = 0 V
Min Typ
-- 0.4
Max Unit
5.5 V 0.55 p F
NXP Semiconductors
Femtofarad bidirectional ESD protection diode
2. Pinning information
Table 2. Pin 1 2
Pinning Description cathode (diode 1) cathode (diode 2)
Simplified outline
12 Transparent top...
