PH3030AL Datasheet | NXP Semiconductors

description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product is designed and qualified for use in puting and consumer applications. 1.2 Features and benefits - High efficiency due to low switching and conduction losses - Suitable for logic level gate drive sources 1.3 Applications - Consumer applications - Desktop Voltage Regulator Module (VRM) - Notebook Voltage Regulator Module (VRM) 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 30 V ID drain current Tmb = 25 °C; VGS = 10 V; [1] - - 100 A see Figure 1 Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 81 W Dynamic characteristics QGD gate-drain charge VGS = 4.5 V; ID = 10 A; VDS = 12 V; see Figure 14 and 15 - 5.1 - n C QG(tot) total gate charge Static characteristics VGS = 4.5 V; ID = 10 A; VDS = 12 V; see Figure 14 - 21 - n C RDSon drain-source VGS = 10 V; ID = 15 A; on-state resistance Tj = 25 °C - 2.19 3 mΩ [1] Continuous current is limited by package. NXP Semiconductors N-channel Trench MOS logic level...