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PHF14NQ20T

N-channel TrenchMOS transistor

PHF14NQ20T Features

* ’Trench’ technology

* Low on-state resistance

* Fast switching SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 7.6 A g RDS(ON) ≤ 230 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technolo

PHF14NQ20T General Description

N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHX14NQ20T is supplied in the SOT186A (FPAK) .

PHF14NQ20T Datasheet (68.90 KB)

Preview of PHF14NQ20T PDF

Datasheet Details

Part number:

PHF14NQ20T

Manufacturer:

NXP ↗

File Size:

68.90 KB

Description:

N-channel trenchmos transistor.

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PHF14NQ20T N-channel TrenchMOS transistor NXP

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