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PHKD3NQ10T

The PHKD3NQ10T is Dual N-channel TrenchMOS standard level FET designed by NXP.

Product Overview

NXP

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PHKD3NQ10T Dual N-channel TrenchMOS standard level FET by NXP - Datasheet Preview — Datasheet preview – PHKD3NQ10T

Datasheet Details

Part number	PHKD3NQ10T
Manufacturer	NXP
File Size	159.19 KB
Description	Dual N-channel TrenchMOS standard level FET
Datasheet	PHKD3NQ10T_PhilipsSemiconductors.pdf
Additional preview pages of the PHKD3NQ10T datasheet.

Product details

Description

Dual N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Motor and relay drivers d.c.

Features

Dual device.
Low on-state resistance.
Fast switching.
Low profile surface mount package SYMBOL d1 d2 QUICK.

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Published: Mar 22, 2005 |