PHU2N50E

PowerMOS transistors Avalanche energy rated

NXP

PHU2N50E Features

* Repetitive Avalanche Rated

* Fast switching

* Stable off-state characteristics

* High thermal cycling performance

* Low thermal resistance

* Extremely high dV/dt capability PHU2N50E QUICK REFERENCE DATA VDSS = 500 V ID = 2 A RDS(ON) ≤ 5 Ω GENERAL

PHU2N50E General Description

N-channel, enhancement mode field-effect power transistor, intended for use in Compact Fluorescent Lamps (CFL) and low power ballasts. The PHU2N50E is compatible with self oscillating and IC driven circuits, including the UBA2021 ballast controller IC. Other applications include off line switched mo.

PHU2N50E Datasheet (64.81 KB)

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