Datasheet Details
- Part number
- PHU2N50E
- Manufacturer
- NXP ↗
- File Size
- 64.81 KB
- Datasheet
- PHU2N50E_PhilipsSemiconductors.pdf
- Description
- PowerMOS transistors Avalanche energy rated
PHU2N50E Description
Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated .
N-channel, enhancement mode field-effect power transistor, intended for use in Compact Fluorescent Lamps (CFL) and low power ballasts.
PHU2N50E Features
* Repetitive Avalanche Rated
* Fast switching
* Stable off-state characteristics
* High thermal cycling performance
* Low thermal resistance
* Extremely high dV/dt capability
PHU2N50E
QUICK REFERENCE DATA VDSS = 500 V ID = 2 A RDS(ON) ≤ 5 Ω
GENERAL
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