PHU2N50E PowerMOS transistors Avalanche energy rated

NXP

Description

Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated .
N-channel, enhancement mode field-effect power transistor, intended for use in Compact Fluorescent Lamps (CFL) and low power ballasts.

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PHU2N50E Datasheet Preview — Preview of PHU2N50E PDF

Datasheet Specifications

Part number: PHU2N50E
Manufacturer: NXP ↗
File Size: 64.81 KB
Datasheet: PHU2N50E_PhilipsSemiconductors.pdf
Description: PowerMOS transistors Avalanche energy rated

Features

* Repetitive Avalanche Rated
* Fast switching
* Stable off-state characteristics
* High thermal cycling performance
* Low thermal resistance
* Extremely high dV/dt capability PHU2N50E QUICK REFERENCE DATA VDSS = 500 V ID = 2 A RDS(ON) ≤ 5 Ω GENERAL

PHU2N50E Distributors

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PHU2N50E PowerMOS transistors Avalanche energy rated NXP

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