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PHW35NQ20T

N-channel TrenchMOS transistor

PHW35NQ20T Features

* ’Trench’ technology

* Very low on-state resistance

* Fast switching

* Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 35 A g RDS(ON) ≤ 70 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelo

PHW35NQ20T General Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHW35NQ20T is supplied in the SOT429 (TO247) convention.

PHW35NQ20T Datasheet (93.40 KB)

Preview of PHW35NQ20T PDF

Datasheet Details

Part number:

PHW35NQ20T

Manufacturer:

NXP ↗

File Size:

93.40 KB

Description:

N-channel trenchmos transistor.

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TAGS

PHW35NQ20T N-channel TrenchMOS transistor NXP

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