PHW35NQ20T Datasheet, Transistor, NXP

PHW35NQ20T Features

• Transistor
• ’Trench’ technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 35 A g

PDF File Details

Part number:

PHW35NQ20T

Manufacturer:

NXP ↗

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93.40kb

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📄 Datasheet

Description:

N-channel trenchmos transistor. N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-

PHW35NQ20T Application

• Applications The PHW35NQ20T is supplied in the SOT429 (TO247) conventional leaded package. PINNING PIN 1 2 3 tab gate drain source drain DESCRIPTI

TAGS

PHW35NQ20T

NXP

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