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PHW80NQ10T

N-channel TrenchMOS transistor

PHW80NQ10T Features

* ’Trench’ technology

* Very low on-state resistance

* Fast switching

* Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 80 A g RDS(ON) ≤ 15 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelo

PHW80NQ10T General Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:

* d.c. to d.c. converters

* switched mode power supplies The PHW80NQ10T is supplied in the SOT429 (TO247) conventional leaded package. PINNING PIN 1 2 3 tab gate dr.

PHW80NQ10T Datasheet (95.84 KB)

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Preview of PHW80NQ10T PDF

Datasheet Details

Part number:

PHW80NQ10T

Manufacturer:

NXP ↗

File Size:

95.84 KB

Description:

N-channel trenchmos transistor.

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TAGS

PHW80NQ10T N-channel TrenchMOS transistor NXP

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