PMBFJ620
description
Two N-channel symmetrical junction field-effect transistors in a SOT363 package.
CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling.
MSC895
1.2 Features s s s s Two field effect transistors in a single package Low noise Interchangeability of drain and source connections High gain.
1.3 Applications s AM input stage in car radios s VHF amplifiers s Oscillators and mixers.
1.4 Quick reference data
Table 1: Per FET VDS VGSoff IDSS Ptot yfs drain-source voltage gate-source cut-off voltage drain current total power dissipation forward transfer admittance VDS = 10 V; ID = 1 µA VGS = 0 V; VDS = 10 V Ts ≤ 90 °C VDS = 10 V; ID = 10 m A
- 2 24 10 ±25
- 6.5 60 190 V V m A m W m S Quick reference data Conditions Min Typ Max Unit Symbol Parameter
Philips Semiconductors
Dual N-channel field-effect transistor
2. Pinning information
Table 2: Pin 1 2 3 4 5 6 Discrete pinning information Description source...
