PMEG6010AED

Low VF (MEGA) Schottky barrier diode

NXP

PMEG6010AED Features

* Low switching losses

* Very high surge current absorption capability

* Fast recovery time

* Guard ring protected

* Plastic SMD package. APPLICATIONS

* Low power switched-mode power supplies

* Rectification

* Polarity protection. handb

PMEG6010AED General Description

5 4 GENERAL DESCRIPTION Planar Schottky barrier diode encapsulated in a SOT457 (SC-74) small plastic package. 1 2 3 MHC634 1, 2 5, 6 3, 4 Marking code: M4. Fig.1 Simplified outline SOT457 (SC-74) and symbol. LIMITING VALUES In accordance with Absolute Maximum Rating System (IEC 60134). SYMB.

PMEG6010AED Datasheet (55.17 KB)

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PMEG6010AED

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NXP ↗

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Description:

Low vf (mega) schottky barrier diode.
DISCRETE SEMICONDUCTORS DATA SHEET age M3D302 PMEG6010AED Low VF (MEGA) Schottky barrier diode Product speciﬁcation 2003 Jun 27 Philips Semiconduc.

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PMEG6010AED Low MEGA Schottky barrier diode NXP

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PMEG6010AED Features

PMEG6010AED General Description

Datasheet Details

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