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PMEG6010AED Low VF (MEGA) Schottky barrier diode

NXP

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Description

DISCRETE SEMICONDUCTORS DATA SHEET age M3D302 PMEG6010AED Low VF (MEGA) Schottky barrier diode Product speciﬁcation 2003 Jun 27 Philips Semiconduc.
5 4 GENERAL DESCRIPTION Planar Schottky barrier diode encapsulated in a SOT457 (SC-74) small plastic package.

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Datasheet Specifications

Part number: PMEG6010AED
Manufacturer: NXP ↗
File Size: 55.17 KB
Datasheet: PMEG6010AED_PhilipsSemiconductors.pdf
Description: Low VF (MEGA) Schottky barrier diode

Features

* Low switching losses
* Very high surge current absorption capability
* Fast recovery time
* Guard ring protected

Applications

* Low power switched-mode power supplies
* Rectification

PMEG6010AED Distributors

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PMEG6010AED Low MEGA Schottky barrier diode NXP

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