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PMR290UNE 700mA N-channel Trench MOSFET

PMR290UNE Description

SO T4 16 PMR290UNE 20 V, 700 mA N-channel Trench MOSFET Rev.1 * 13 September 2011 Product data sheet 1.Product profile 1.1 General descrip.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET te.

PMR290UNE Features

* Very fast switching
* Trench MOSFET technology
* ESD protection up to 2 kV

PMR290UNE Applications

* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25

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Datasheet Details

Part number
PMR290UNE
Manufacturer
NXP ↗
File Size
166.55 KB
Datasheet
PMR290UNE-NXP.pdf
Description
700mA N-channel Trench MOSFET

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700mA N-channel Trench MOSFET NXP
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