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PXB16050U NPN microwave power transistor

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Description

DISCRETE SEMICONDUCTORS DATA SHEET PXB16050U NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 19 Philips S.
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to the flange.

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Features

* Input and output matching cells allow an easier design of circuits
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Interdigitated structure provides high emitter efficiency
* Gold metallization realizes very

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