1N2133A - Standard Recovery Diode

Naina Semiconductor

Datasheet Details

Glass passivated die.
Low forward voltage drop.
High surge capability.
Low leakage current.
Normal and Reverse polarity.
Metric and UNF threads available DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Test Conditions Symbol 1N2133A(R) Repetitive peak reverse voltage VRRM 300 RMS reverse voltage VRMS 210 DC blocking voltage VDC 50 Continuous forward current TC ≤ 150oC IF(AV) 60 Surge non-repetit.

📁 1N2133A Similar Datasheet

1N2133AR - Silicon Standard Recovery Diode (America Semiconductor)
1N213 - (1N200 - 1N222) General Purpose Diodes (International Semiconductor)
1N2130A - 35/40/and 60 Amp Power Silicon Rectifier Diodes (International Rectifier)
1N2130AR - Silicon Standard Recovery Diode (America Semiconductor)
1N2131A - 35/40/and 60 Amp Power Silicon Rectifier Diodes (International Rectifier)
1N2131AR - Silicon Standard Recovery Diode (America Semiconductor)
1N2135A - 35/40/and 60 Amp Power Silicon Rectifier Diodes (International Rectifier)
1N2135AR - Silicon Standard Recovery Diode (America Semiconductor)

Other Datasheets by Naina Semiconductor

Published: Jun 26, 2019 |