MBR600100CT
Features
- -
- - Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM
MBR60045CT thru MBR600100CTR
Silicon Schottky Diode, 600A
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25o C unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 100 o C TC = 25 o C tp = 8.3 ms Conditions MBR60045CT (R) 45 32 45 600 MBR60060CT MBR60080CT (R) (R) 60 42 60 600 80 56 80 600 MBR600100C T(R) 100 70 100 600 Units V V V A
IFSM
4000 http://..net/
Electrical Characteristics (TJ = 25o C unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 300 A TJ = 25 o C VR = 20 V TJ = 25 o C VR = 20 V TJ = 125o C MBR60045CT (R) 0.75 1 20 MBR60060CT (R) 0.85 1 20 MBR60080CT (R) 0.88 1 20 MBR600100C T(R) 0.88 1 m A 20 Units V
DC reverse current
Thermal Characteristics (TJ...
