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MBR60035CT - Schottky Power Diode

Download the MBR60035CT datasheet PDF. This datasheet also covers the MBR60020CT variant, as both devices belong to the same schottky power diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR60020CT thru MBR60040CTR Silicon Schottky Diode, 600A TWIN TOWER.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBR60020CT_NainaSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MBR60035CT
Manufacturer Naina Semiconductor
File Size 184.88 KB
Description Schottky Power Diode
Datasheet download datasheet MBR60035CT Datasheet

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Other Datasheets by Naina Semiconductor

Part Number Description
MBR60035CTR Schottky Power Diode
MBR60030CT Schottky Power Diode
MBR60030CTR Schottky Power Diode
MBR600100CT Schottky Power Diode
MBR600100CTR Schottky Power Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR60020CT thru MBR60040CTR Silicon Schottky Diode, 600A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 100 oC TC = 25 oC tp = 8.3 ms Conditions MBR60020CT (R) 20 14 20 600 MBR60030CT MBR60035CT (R) (R) 30 21 30 600 35 25 35 600 MBR60040CT (R) 40 28 40 600 Units V V V A IFSM 4000 http://www.DataSheet4U.