NT16TC72C4NB3NL Datasheet | Nanya Technology

NT2GC72B89B0NJ/NT2GC72B89B2NJ/NT2GC72C89B0NJ/NT2GC72C89B2NJ NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72C4PB2NL/NT4GC72B8PB0NL/NT4GC72C8PB0NL/NT4GC72C8PB2NL NT8GC72B4NB1NJ/NT8GC72B4NB3NJ/NT8GC72C4NB1NJ/NT8GC72C4NB3NJ NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72C4NB3NL 2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72 PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM Based on DDR3-1066/1333 256Mx8 (2GB/4GB) / 512Mx4 (4GB/8GB) SDRAM B-Die Based on DDR3-1066 1Gx4 (DDP) (16GB) SDRAM B-Die Features - Performance: Speed Sort DIMM CAS Latency fck - Clock Frequency tck - Clock Cycle f DQ - DQ Burst Frequency PC3-8500 -BE 7 533 1.875 1066 PC3-10600 -CG 9 667 1.5 1333 MHz ns Mbps - Programmable Operation: - DIMM  Latency: 6,7,8,9 - Burst Type: Sequential or Interleave - Burst Length: BC4, BL8 - Operation: Burst Read and Write - Two different termination values (Rtt_Nom & Rtt_WR) - 15/10/1 (row/column/rank) Addressing for 2GB - 15/11/1 (row/column/rank) Addressing for 4GB (512Mx4 Device) - 15/10/2 (row/column/rank) Addressing for 4GB (256Mx8 Device) - 15/11/2 (row/column/rank) Addressing for 8GB - 15/11/4 (row/column/rank) Addressing for 16GB - Extended operating temperature rage - Auto Self-Refresh option - Serial Presence Detect - Gold contacts - SDRAMs are in 78-ball BGA Package - Ro HS pliance and Halogen free Unit - 240-Pin Registered Dual In-Line Memory Module (RDIMM) - 2GB/4GB: 256Mx72/512Mx72 DDR3 Registered DIMM based on 256Mx8 DDR3 SDRAM B-Die devices - 4GB/8GB: 512Mx72/1024Mx72 DDR3 Registered DIMM based on 512Mx4 DDR3 SDRAM B-Die devices - 16GB: 2Gx72 DDR3 Registered DIMM based on 1024Mx4 (DDP) DDR3 SDRAM B-Die devices - Intended for 533MHz/667MHz...